Industry News

With the rapid development of semiconductor, flat panel display and solar photovoltaic technologies, chemical vapor deposition (CVD) and atomic layer deposition (ALD) as two important thin film preparation technologies are receiving extensive attention in the industry. As the core materials of these two technologies, CVD and ALD

I. Integrated Circuits
1.1 Metal Interconnects and Contact Layers/Plugs
Aluminum interconnects have been used for a long time. However, with the continued frequency reduction, lower resistance materials are needed to reduce RC delay. Today, most devices choose copper interconnects. However, for GaAs devices, copper is the most common material.

ALD Overview Atomic layer deposition (ALD) enables precise control at the atomic level. The principle of atomic layer deposition (ALD) is similar to that of chemical vapor deposition (CVD), except that the ALD reaction divides the CVD reaction into two half reactions.

Thin film deposition is the process of building up material on a substrate in the range of a few nanometers to approximately 100 micrometers. There are several types of thin film deposition, and each technique has different characteristics in terms of how the source evaporates, how fast the material is deposited, what materials can be used, and the properties of the thin film produced.

"Deposition" technology is crucial in the manufacturing process of the products we use, such as smartphones, personal computers, cars, semiconductors, etc. Invisible coating technology supports our daily lives. Since there are many types of deposition, this article summarizes different types of deposition and their characteristics.

Chemical vapor deposition (CVD) is a process for depositing solid materials such as nanotubes, nanowires, particles, thin films, etc. onto a substrate by creating reactive species in the gas phase. The reactive species is formed when a precursor gas contacts or passes over a heated substrate. There are several types of CVD, including metal-organic chemical vapor deposition (MOCVD), low-pressure chemical vapor deposition (LPCVD), and atmospheric pressure chemical vapor deposition (APCVD). In the MOCVD process, metal-organic species are used to form thin films of metals and metal compounds such as metal nitrides and metal oxides.