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EnglishALD growth process of aluminum oxide
A detailed example of an ALD recipe for growing aluminum oxide (Al₂O₃) thin films based on trimethylaluminum (TMA) and water as precursors:
I. Equipment preparation and inspection
Make sure the ALD equipment has been properly installed and connected to the required gas supply system, vacuum pump and control system.
Check whether all connection points are tight to prevent gas leakage.
Turn on the cooling system of the equipment to ensure that the equipment operates at a suitable temperature.
II. Software settings and parameter configuration
Open the control software and log in to your account.
Enter the configuration interface of the equipment and set the reaction temperature (for example, 200 degrees Celsius) and other related parameters.
In the "recipe" interface, create a new program or call a saved program as a template for modification.
3. Recipe steps and parameters
The following is a typical recipe for aluminum oxide deposition steps and parameter settings:
Step 1: Precursor pulse (TMA)
Command: pulse(#, value)
Parameter: # is set to the valve number corresponding to the TMA precursor
value is set to the pulse time (e.g. 0.1 seconds)
In this step, the TMA precursor is pulsed into the reaction chamber to react with the hydroxyl (-OH) on the sample surface.
Step 2: Purge
Command: wait( , value)
Parameter: value is set to the purge time (e.g. 5 seconds)
Purge the reaction chamber with nitrogen or other inert gas to remove unreacted TMA precursor and byproducts.
Step 3: Precursor pulse (water)
Command: pulse(#, value)
Parameter: # is set to the valve number corresponding to water vapor
value is set to the pulse time (e.g. 0.1 seconds)
Water vapor is pulsed into the reaction chamber and reacts with the surface species generated by the TMA reaction to form an aluminum oxide film and produce methane (CH₄) as a byproduct.
Step 4: Purge
Command: wait( , value)
Parameter: value is set to the purge time (e.g. 5 seconds)
Purge the reaction chamber again with nitrogen or other inert gas to remove unreacted water vapor and methane.
Cycle steps
Set the above four steps as a cycle and set the number of cycles (e.g. 100 times) according to the required film thickness.
IV. Start the deposition program
In the "recipe" interface, confirm that all steps and parameter settings are correct, then download and start the deposition program.
Monitor the operating status of the equipment and the changes in the reaction temperature to ensure that the deposition process proceeds smoothly.
5. Deposition completion and subsequent processing
After the reaction is completed, close the reaction source valve and vacuum pump.
After waiting for the reaction temperature to cool to room temperature, open the chamber door and the reaction chamber door to take out the deposited sample.
Perform necessary subsequent processing and analysis on the sample.
Precautions
During the entire operation, be sure to follow the safe operating procedures to prevent gas leakage and accidental injury.
Depending on the experimental requirements and equipment model, the above recipe may need to be appropriately adjusted and optimized.
Maintain and maintain the equipment regularly to ensure the normal operation of the equipment and extend its service life.
It is a method that can coat the material layer by layer on the substrate surface in the form of a single atomic film. Atomic layer deposition is similar to ordinary chemical deposition. However, in the atomic layer deposition process, the chemical reaction of the new layer of atomic film is directly related to the previous layer, which allows only one layer of atoms to be deposited in each reaction.